Nanostructured encapsulation coverglasses with wide-angle broadband antireflection and self-cleaning properties for III-V multi-junction solar cell applications
Identifieur interne : 000071 ( Main/Repository ); précédent : 000070; suivant : 000072Nanostructured encapsulation coverglasses with wide-angle broadband antireflection and self-cleaning properties for III-V multi-junction solar cell applications
Auteurs : RBID : Pascal:14-0027489Descripteurs français
- Pascal (Inist)
- Encapsulation, Large bande, Cellule solaire multijonction, Revêtement antiréfléchissant, Evaluation performance, Procédé dépôt, Traitement thermique, Procédé voie humide, Procédé voie sèche, Mouillage, Propriété optique, Prévision, Méthode couplée, Méthode analyse, Angle contact, Facteur transmission, Incidence normale, Etude comparative, Cellule solaire gallium arséniure, Courant court circuit, Taux conversion, Composé III-V, Phosphure de gallium, Phosphure d'indium, Composé ternaire, Germanium, Verre, Or, Nanoamas, Eau, InGaP, Matériau nanostructuré.
- Wicri :
English descriptors
- KwdEn :
- Analysis method, Antireflection coating, Comparative study, Contact angle, Conversion rate, Coupled method, Deposition process, Dry process, Encapsulation, Forecasting, Gallium arsenide solar cells, Gallium phosphide, Germanium, Glass, Gold, Heat treatment, III-V compound, Indium phosphide, Multijunction solar cells, Nanocluster, Nanostructured material, Normal incidence, Optical properties, Performance evaluation, Short circuit currents, Ternary compound, Transmittance, Water, Wet process, Wetting, Wide band.
Abstract
We report the effect of nanocone arrays (NCAs) as an antireflection coating (ARC) of encapsulation coverglasses on the device performance of encapsulated III-V InGaP/GaAs/Ge triple-junction (TJ) solar cells. The NCAs were fabricated on the single-side surface of glasses using the gold nanopatterns (i.e., nanoclusters) prepared by the glancing angle deposition technique without additional thermal treatment and the subsequent dry etching. Their wetting behavior and optical properties, together with a theoretical prediction using the rigorous coupled-wave analysis method, were investigated. The NCAs ARC coverglass exhibited a much lower water contact angle (θcA) of < 5° (i.e., superhydrophilic surface) and higher solar weighted transmittance (SWT) of ˜95.9% over a wide wavelength region of 300-1800 nm at normal incidence compared to the bare coverglass (i.e., θcA∼63° and SWT ˜92.8%). The use of the NCAs ARC coverglass in encapsulated III-V InGaP/GaAs/Ge TJ solar cells led to the higher short circuit current density (Jsc) of 14.22 mA/cm2 and thus improved the conversion efficiency (η) to 32.07% (cf., Jsc= 13.84 mA/cm2 and η = 30.6% for the cell with the bare coverglass). For incident angle-dependent solar cell characteristics, it also showed a superior solar power conversion property in wide incident light angles of 20-80°.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Nanostructured encapsulation coverglasses with wide-angle broadband antireflection and self-cleaning properties for III-V multi-junction solar cell applications</title><author><name>JUNG WOO LEEM</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electronics and Radio Engineering, Kyung Hee University, 1 Seocheon-dong, Giheung-gu</s1><s2>Yongin-si, Gyeonggi-do 446-701</s2><s3>KOR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Yongin-si, Gyeonggi-do 446-701</wicri:noRegion></affiliation></author><author><name>JAE SU YU</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electronics and Radio Engineering, Kyung Hee University, 1 Seocheon-dong, Giheung-gu</s1><s2>Yongin-si, Gyeonggi-do 446-701</s2><s3>KOR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Yongin-si, Gyeonggi-do 446-701</wicri:noRegion></affiliation></author><author><name>JONGGON HEO</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Korea Advanced Nano Fab Center, 109 Kwangkyo-ro, Yeongtong-gu</s1><s2>Suwon-si, Gyeonggi-do 443-270</s2><s3>KOR</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Suwon-si, Gyeonggi-do 443-270</wicri:noRegion></affiliation></author><author><name sortKey="Park, Won Kyu" uniqKey="Park W">Won-Kyu Park</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Korea Advanced Nano Fab Center, 109 Kwangkyo-ro, Yeongtong-gu</s1><s2>Suwon-si, Gyeonggi-do 443-270</s2><s3>KOR</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Suwon-si, Gyeonggi-do 443-270</wicri:noRegion></affiliation></author><author><name sortKey="Park, Jin Hong" uniqKey="Park J">Jin-Hong Park</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>School of Electronics and Electrical Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu</s1><s2>Suwon-si, Cyeonggi-do 440-746</s2><s3>KOR</s3><sZ>5 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Suwon-si, Cyeonggi-do 440-746</wicri:noRegion></affiliation></author><author><name>WOO JIN CHO</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Heesung Electronics LTD., 357-70 Hosan-dong</s1><s2>Dalseo-gu, Daegu-si 704-946</s2><s3>KOR</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Dalseo-gu, Daegu-si 704-946</wicri:noRegion></affiliation></author><author><name>DO EOK KIM</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Heesung Electronics LTD., 357-70 Hosan-dong</s1><s2>Dalseo-gu, Daegu-si 704-946</s2><s3>KOR</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Dalseo-gu, Daegu-si 704-946</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">14-0027489</idno><date when="2014">2014</date><idno type="stanalyst">PASCAL 14-0027489 INIST</idno><idno type="RBID">Pascal:14-0027489</idno><idno type="wicri:Area/Main/Corpus">000252</idno><idno type="wicri:Area/Main/Repository">000071</idno></publicationStmt><seriesStmt><idno type="ISSN">0927-0248</idno><title level="j" type="abbreviated">Sol. energy mater. sol. cells</title><title level="j" type="main">Solar energy materials and solar cells</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Analysis method</term><term>Antireflection coating</term><term>Comparative study</term><term>Contact angle</term><term>Conversion rate</term><term>Coupled method</term><term>Deposition process</term><term>Dry process</term><term>Encapsulation</term><term>Forecasting</term><term>Gallium arsenide solar cells</term><term>Gallium phosphide</term><term>Germanium</term><term>Glass</term><term>Gold</term><term>Heat treatment</term><term>III-V compound</term><term>Indium phosphide</term><term>Multijunction solar cells</term><term>Nanocluster</term><term>Nanostructured material</term><term>Normal incidence</term><term>Optical properties</term><term>Performance evaluation</term><term>Short circuit currents</term><term>Ternary compound</term><term>Transmittance</term><term>Water</term><term>Wet process</term><term>Wetting</term><term>Wide band</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Encapsulation</term><term>Large bande</term><term>Cellule solaire multijonction</term><term>Revêtement antiréfléchissant</term><term>Evaluation performance</term><term>Procédé dépôt</term><term>Traitement thermique</term><term>Procédé voie humide</term><term>Procédé voie sèche</term><term>Mouillage</term><term>Propriété optique</term><term>Prévision</term><term>Méthode couplée</term><term>Méthode analyse</term><term>Angle contact</term><term>Facteur transmission</term><term>Incidence normale</term><term>Etude comparative</term><term>Cellule solaire gallium arséniure</term><term>Courant court circuit</term><term>Taux conversion</term><term>Composé III-V</term><term>Phosphure de gallium</term><term>Phosphure d'indium</term><term>Composé ternaire</term><term>Germanium</term><term>Verre</term><term>Or</term><term>Nanoamas</term><term>Eau</term><term>InGaP</term><term>Matériau nanostructuré</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Verre</term><term>Or</term><term>Eau</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We report the effect of nanocone arrays (NCAs) as an antireflection coating (ARC) of encapsulation coverglasses on the device performance of encapsulated III-V InGaP/GaAs/Ge triple-junction (TJ) solar cells. The NCAs were fabricated on the single-side surface of glasses using the gold nanopatterns (i.e., nanoclusters) prepared by the glancing angle deposition technique without additional thermal treatment and the subsequent dry etching. Their wetting behavior and optical properties, together with a theoretical prediction using the rigorous coupled-wave analysis method, were investigated. The NCAs ARC coverglass exhibited a much lower water contact angle (θ<sub>cA</sub>) of < 5° (i.e., superhydrophilic surface) and higher solar weighted transmittance (SWT) of ˜95.9% over a wide wavelength region of 300-1800 nm at normal incidence compared to the bare coverglass (i.e., θ<sub>cA</sub>∼63° and SWT ˜92.8%). The use of the NCAs ARC coverglass in encapsulated III-V InGaP/GaAs/Ge TJ solar cells led to the higher short circuit current density (J<sub>sc</sub>) of 14.22 mA/cm<sup>2</sup> and thus improved the conversion efficiency (η) to 32.07% (cf., J<sub>sc</sub>= 13.84 mA/cm<sup>2</sup> and η<sub> </sub>= 30.6% for the cell with the bare coverglass). For incident angle-dependent solar cell characteristics, it also showed a superior solar power conversion property in wide incident light angles of 20-80°.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0927-0248</s0></fA01><fA03 i2="1"><s0>Sol. energy mater. sol. cells</s0></fA03><fA05><s2>120</s2></fA05><fA06><s3>p. b</s3></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Nanostructured encapsulation coverglasses with wide-angle broadband antireflection and self-cleaning properties for III-V multi-junction solar cell applications</s1></fA08><fA11 i1="01" i2="1"><s1>JUNG WOO LEEM</s1></fA11><fA11 i1="02" i2="1"><s1>JAE SU YU</s1></fA11><fA11 i1="03" i2="1"><s1>JONGGON HEO</s1></fA11><fA11 i1="04" i2="1"><s1>PARK (Won-Kyu)</s1></fA11><fA11 i1="05" i2="1"><s1>PARK (Jin-Hong)</s1></fA11><fA11 i1="06" i2="1"><s1>WOO JIN CHO</s1></fA11><fA11 i1="07" i2="1"><s1>DO EOK KIM</s1></fA11><fA14 i1="01"><s1>Department of Electronics and Radio Engineering, Kyung Hee University, 1 Seocheon-dong, Giheung-gu</s1><s2>Yongin-si, Gyeonggi-do 446-701</s2><s3>KOR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA14><fA14 i1="02"><s1>Korea Advanced Nano Fab Center, 109 Kwangkyo-ro, Yeongtong-gu</s1><s2>Suwon-si, Gyeonggi-do 443-270</s2><s3>KOR</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="03"><s1>School of Electronics and Electrical Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu</s1><s2>Suwon-si, Cyeonggi-do 440-746</s2><s3>KOR</s3><sZ>5 aut.</sZ></fA14><fA14 i1="04"><s1>Heesung Electronics LTD., 357-70 Hosan-dong</s1><s2>Dalseo-gu, Daegu-si 704-946</s2><s3>KOR</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ></fA14><fA20><s1>555-560</s1></fA20><fA21><s1>2014</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>18016</s2><s5>354000508232450150</s5></fA43><fA44><s0>0000</s0><s1>© 2014 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>32 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>14-0027489</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Solar energy materials and solar cells</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>We report the effect of nanocone arrays (NCAs) as an antireflection coating (ARC) of encapsulation coverglasses on the device performance of encapsulated III-V InGaP/GaAs/Ge triple-junction (TJ) solar cells. The NCAs were fabricated on the single-side surface of glasses using the gold nanopatterns (i.e., nanoclusters) prepared by the glancing angle deposition technique without additional thermal treatment and the subsequent dry etching. Their wetting behavior and optical properties, together with a theoretical prediction using the rigorous coupled-wave analysis method, were investigated. The NCAs ARC coverglass exhibited a much lower water contact angle (θ<sub>cA</sub>) of < 5° (i.e., superhydrophilic surface) and higher solar weighted transmittance (SWT) of ˜95.9% over a wide wavelength region of 300-1800 nm at normal incidence compared to the bare coverglass (i.e., θ<sub>cA</sub>∼63° and SWT ˜92.8%). The use of the NCAs ARC coverglass in encapsulated III-V InGaP/GaAs/Ge TJ solar cells led to the higher short circuit current density (J<sub>sc</sub>) of 14.22 mA/cm<sup>2</sup> and thus improved the conversion efficiency (η) to 32.07% (cf., J<sub>sc</sub>= 13.84 mA/cm<sup>2</sup> and η<sub> </sub>= 30.6% for the cell with the bare coverglass). For incident angle-dependent solar cell characteristics, it also showed a superior solar power conversion property in wide incident light angles of 20-80°.</s0></fC01><fC02 i1="01" i2="X"><s0>001D06C02D1</s0></fC02><fC02 i1="02" i2="X"><s0>001D05I03D</s0></fC02><fC02 i1="03" i2="X"><s0>230</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Encapsulation</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Encapsulation</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Encapsulación</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Large bande</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Wide band</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Banda ancha</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Cellule solaire multijonction</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Multijunction solar cells</s0><s5>03</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Revêtement antiréfléchissant</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Antireflection coating</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Revestimiento antirreflexión</s0><s5>04</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Evaluation performance</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Performance evaluation</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Evaluación prestación</s0><s5>05</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Procédé dépôt</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Deposition process</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Procedimiento revestimiento</s0><s5>06</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Traitement thermique</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Heat treatment</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Tratamiento térmico</s0><s5>07</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Procédé voie humide</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Wet process</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Procedimiento vía húmeda</s0><s5>08</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Procédé voie sèche</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Dry process</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Procedimiento vía seca</s0><s5>09</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Mouillage</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Wetting</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Remojo</s0><s5>10</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Propriété optique</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Optical properties</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Propiedad óptica</s0><s5>11</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Prévision</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>Forecasting</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Previsión</s0><s5>12</s5></fC03><fC03 i1="13" i2="X" l="FRE"><s0>Méthode couplée</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="ENG"><s0>Coupled method</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="SPA"><s0>Método acoplado</s0><s5>13</s5></fC03><fC03 i1="14" i2="X" l="FRE"><s0>Méthode analyse</s0><s5>14</s5></fC03><fC03 i1="14" i2="X" l="ENG"><s0>Analysis method</s0><s5>14</s5></fC03><fC03 i1="14" i2="X" l="SPA"><s0>Método análisis</s0><s5>14</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>Angle contact</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="ENG"><s0>Contact angle</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="SPA"><s0>Angulo contacto</s0><s5>15</s5></fC03><fC03 i1="16" i2="X" l="FRE"><s0>Facteur transmission</s0><s5>16</s5></fC03><fC03 i1="16" i2="X" l="ENG"><s0>Transmittance</s0><s5>16</s5></fC03><fC03 i1="16" i2="X" l="SPA"><s0>Factor transmisión</s0><s5>16</s5></fC03><fC03 i1="17" i2="X" l="FRE"><s0>Incidence normale</s0><s5>17</s5></fC03><fC03 i1="17" i2="X" l="ENG"><s0>Normal incidence</s0><s5>17</s5></fC03><fC03 i1="17" i2="X" l="SPA"><s0>Incidencia normal</s0><s5>17</s5></fC03><fC03 i1="18" i2="X" l="FRE"><s0>Etude comparative</s0><s5>18</s5></fC03><fC03 i1="18" i2="X" l="ENG"><s0>Comparative study</s0><s5>18</s5></fC03><fC03 i1="18" i2="X" l="SPA"><s0>Estudio comparativo</s0><s5>18</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Cellule solaire gallium arséniure</s0><s5>19</s5></fC03><fC03 i1="19" i2="3" l="ENG"><s0>Gallium arsenide solar cells</s0><s5>19</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>Courant court circuit</s0><s5>20</s5></fC03><fC03 i1="20" i2="3" l="ENG"><s0>Short circuit currents</s0><s5>20</s5></fC03><fC03 i1="21" i2="X" l="FRE"><s0>Taux conversion</s0><s5>21</s5></fC03><fC03 i1="21" i2="X" l="ENG"><s0>Conversion rate</s0><s5>21</s5></fC03><fC03 i1="21" i2="X" l="SPA"><s0>Factor conversión</s0><s5>21</s5></fC03><fC03 i1="22" i2="X" l="FRE"><s0>Composé III-V</s0><s5>22</s5></fC03><fC03 i1="22" i2="X" l="ENG"><s0>III-V compound</s0><s5>22</s5></fC03><fC03 i1="22" i2="X" l="SPA"><s0>Compuesto III-V</s0><s5>22</s5></fC03><fC03 i1="23" i2="X" l="FRE"><s0>Phosphure de gallium</s0><s5>23</s5></fC03><fC03 i1="23" i2="X" l="ENG"><s0>Gallium phosphide</s0><s5>23</s5></fC03><fC03 i1="23" i2="X" l="SPA"><s0>Galio fosfuro</s0><s5>23</s5></fC03><fC03 i1="24" i2="X" l="FRE"><s0>Phosphure d'indium</s0><s5>24</s5></fC03><fC03 i1="24" i2="X" l="ENG"><s0>Indium phosphide</s0><s5>24</s5></fC03><fC03 i1="24" i2="X" l="SPA"><s0>Indio fosfuro</s0><s5>24</s5></fC03><fC03 i1="25" i2="X" l="FRE"><s0>Composé ternaire</s0><s5>25</s5></fC03><fC03 i1="25" i2="X" l="ENG"><s0>Ternary compound</s0><s5>25</s5></fC03><fC03 i1="25" i2="X" l="SPA"><s0>Compuesto ternario</s0><s5>25</s5></fC03><fC03 i1="26" i2="X" l="FRE"><s0>Germanium</s0><s2>NC</s2><s5>26</s5></fC03><fC03 i1="26" i2="X" l="ENG"><s0>Germanium</s0><s2>NC</s2><s5>26</s5></fC03><fC03 i1="26" i2="X" l="SPA"><s0>Germanio</s0><s2>NC</s2><s5>26</s5></fC03><fC03 i1="27" i2="X" l="FRE"><s0>Verre</s0><s5>27</s5></fC03><fC03 i1="27" i2="X" l="ENG"><s0>Glass</s0><s5>27</s5></fC03><fC03 i1="27" i2="X" l="SPA"><s0>Vidrio</s0><s5>27</s5></fC03><fC03 i1="28" i2="X" l="FRE"><s0>Or</s0><s2>NC</s2><s5>28</s5></fC03><fC03 i1="28" i2="X" l="ENG"><s0>Gold</s0><s2>NC</s2><s5>28</s5></fC03><fC03 i1="28" i2="X" l="SPA"><s0>Oro</s0><s2>NC</s2><s5>28</s5></fC03><fC03 i1="29" i2="X" l="FRE"><s0>Nanoamas</s0><s5>29</s5></fC03><fC03 i1="29" i2="X" l="ENG"><s0>Nanocluster</s0><s5>29</s5></fC03><fC03 i1="29" i2="X" l="SPA"><s0>Nanomontón</s0><s5>29</s5></fC03><fC03 i1="30" i2="X" l="FRE"><s0>Eau</s0><s5>30</s5></fC03><fC03 i1="30" i2="X" l="ENG"><s0>Water</s0><s5>30</s5></fC03><fC03 i1="30" i2="X" l="SPA"><s0>Agua</s0><s5>30</s5></fC03><fC03 i1="31" i2="X" l="FRE"><s0>InGaP</s0><s4>INC</s4><s5>82</s5></fC03><fC03 i1="32" i2="X" l="FRE"><s0>Matériau nanostructuré</s0><s4>CD</s4><s5>96</s5></fC03><fC03 i1="32" i2="X" l="ENG"><s0>Nanostructured material</s0><s4>CD</s4><s5>96</s5></fC03><fN21><s1>027</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour 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